Elevated Temperature Irradiation

In the following we will deal with the experiments we have performed in order to study the ELDRE response of RHBip1 technology. The basic idea is to irradiate devices at high temperature to enhance the damage, as suggested in [1]. Of course we will also try to understand this behavior using the model described in Chapter 5. Eventually we will compare ETI results with LDR ones to see if the ETI method is suitable to bind LDR degradation for the technology considered. An ETI experiment consists of irradiating a device at a medium-high dose rate (let say between 10 and 300 rad/s) and at high temperature (from 25 to 200 “C usually). We recall that there exists a temperature that maximizes the damage [7], and in general the degradation vs. temperature plot is Gaussian-like. As specified in Chapter 5 the width and height of this curve can be helpful to extract the oxide-trapped charge energy levels. Without dwelling on further details, let say that now our purpose is to find out a plot like the one in [8]. Next Chapter will deal with data analysis and oxide characterization. On the other hand this Chapter is devoted to illustrate experimental details and trouble-shooting.